BDV66-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial base transistors mounted in TO-3PN. The...
BDV66-A-B-C
PNP SILICON DARLINGTONS POWER
TRANSISTORS
They are silicon epitaxial base
transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV67-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO Collector-Emitter Voltage
Ratings
BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C
Value
-80 -100 -120 -140 -80 -100 -120 -140 -5.0
Unit
V
VCBO
Collector-Base Voltage
www.DataSheet.net/
V
VEBO
Emitter-Base Voltage
V
IC
Collector Current
-16 A -20
ICM
Collector Peak Current
IB
Base Current
-0.5
A
26/09/2012
COMSET SEMICONDUCTORS
1/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDV66-A-B-C
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C
Value
Unit
PT
Power Dissipation
Tmb = 25° C
175
Watts
TJ
Junction Temperature
150 °C -65 to +150
TS
Storage Temperature
THERMAL CHARACTERISTICS Symbol
Rthj-c
www.DataSheet.net/
Ratings
Thermal Resistance, Junction to Case
Value
0.625
Unit
°C / W
SWITCHING TIMES Symbol
ton toff
Ratings
turn-on time turn-off time
Test Condition(s) Min
IC= 10 A , VCC= 12 V IB1 = -IB2 = 40 mA -
Value Typ
1 3.5
Unit Max
µs
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5 %
26/09/2012
COMSET SEMICONDUCTORS
2/4
Datasheet pdf - http://www.DataSheet4U.co.k...