BDV66B

isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -10A ·Complement to Type BDV67/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDV66 -80 VCBO Collector-Base Voltage BDV66A -100 V BDV66B -120 BDV66C -140 BDV66 -60 VCEO Collector-Emitter Voltage BDV66A -80 V BDV66B -100 BDV66C -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -16 A ICM Collector Current-Peak -20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 175 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.625 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDV66/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDV66 VCEO(SUS) Collector-Emitter Sustaining Voltage BDV66A BDV66B IC= -50mA ;IB=0 BDV66C VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA VBE(on) ICEO Base-Emitter On Voltage Collector Cutoff Current IC= -10A ; VCE= -3V VCE= 1/2VCEOma...