BDV65C

BDV65-A-B-C NNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV64-A- B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C Value 60 80 100 120 60 80 100 120 5.0 Unit VCEO Collector-Emitter Voltage www.DataSheet.net/ V VCBO Collector-Base Voltage V VEBO Emitter-Base Voltage V IC Collector Current 12 A 15 ICM Collector Peak Current IB Base Current 0.5 A 26/09/2012 COMSET SEMICONDUCTORS 1/4 Datasheet pdf - http://www.DataSheet4U.co.kr/ BDV65-A-B-C ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C Value Unit Tmb = 25° C PT Power Dissipation Tmb = 25° C 125 Watts 3.5 TJ Junction Temperature 150 °C -65 to +150 TS Storage Temperature www.DataSheet.net/ THERMAL CHARACTERISTICS Symbol Ratings BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C Value Unit Rthj-c Thermal Resistance, Junction to Case 1 °C / W 35.7 Rthj-a Thermal Resistance, Junction to Ambient 26/09/2012 COMSET SEMICONDUCTORS 2/4 Datasheet pdf - http://www.DataSheet4U.co.kr/ BDV65-A-B-C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted S...