SEMICONDUCTORS
BDT64-A-B-C SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalringt...
SEMICONDUCTORS
BDT64-A-B-C SILICON DARLINGTON POWER
TRANSISTORS
PNP epitaxial-base
transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.
PNP complements are BDT65-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C
Value
-60 -80 -100 -120 -60 -80 -100 -120
Unit
VCBO
Collector-Base Voltage
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V
VCEO
Collector-Emitter Voltage
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-12
A
ICM
Collector Peak Current
-20
A
26/09/2012
COMSET SEMICONDUCTORS
1|5
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BDT64-A-B-C
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C
Value
Unit
IB
Base Current
-500
mA
PT
Power Dissipation
@ Tmb < 25°
125
Watts
TJ
Junction Temperature
150 °C -65 to +150
Ts
Storage Temperature range
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Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS Symbol
Rthj-c
Ratings
Thermal Resistance, Junction to Case
Value
1
Unit
°C/W
26/09/2012
COMSET SEMICONDUCTORS
2|5
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BDT64-A-B-C
ELECTRIC...