BDT63

SEMICONDUCTORS BDT63-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 envelope. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT62-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDT63 BDT63A BDT63B BDT63C BDT63 BDT63A BDT63B BDT63C BDT63 BDT63A Value 60 80 100 120 60 80 100 120 Unit VCBO Collector-Base Voltage www.DataSheet.net/ V VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage BDT63B BDT63C BDT63 BDT63A 5 V IC Collector Current BDT63B BDT63C BDT63 BDT63A 10 A ICM Collector Peak Current BDT63B BDT63C 15 A 26/09/2012 COMSET SEMICONDUCTORS 1|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BDT63-A-B-C ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDT63 BDT63A BDT63B BDT63C BDT63 BDT63A BDT63B BDT63C BDT63 BDT63A BDT63B BDT63C BDT63 BDT63A BDT63B BDT63C Value Unit IB Base Current 250 mA PT Power Dissipation @ Tmb < 25° 90 W TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Ratings BDT63 BDT63A BDT63B BDT63C BDT63 BDT63A BDT63B BDT63C Value Unit RthJ-MB From junction to mounting base 1.39 K/W RthJ-A From junction to ambient in free air 70 K/W 26/09/2012 COMSET SEMICONDU...