PNP BD912 POWER LINEAR AND SWITCHING APPLICATIONS.
The BD912 are PNP transistors mounted in Jedec TO-220 plastic package...
PNP BD912 POWER LINEAR AND SWITCHING APPLICATIONS.
The BD912 are
PNP transistors mounted in Jedec TO-220 plastic package. They are intended for use in power linear and switching applications.
NPN complements are BD911. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC IE IB PD TJ TStg
Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Total Device Dissipation @ TC = 25° Junction Temperature Storage Temperature range
Value
-100 -100 -5.0 -15 -15 -5 90 150 -65 to +150
Unit
V V V A A A W °C °C
www.DataSheet.net/
THERMAL CHARACTERISTICS Symbol
RthJ-case
Ratings
Thermal Resistance, Junction - Case
Value
70
Unit
K/W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP BD912
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICEO ICBO IEBO VCEO VBE hFE -VCE(SAT) -VBE(SAT) fT
Ratings
Collector Cutoff Current Collector Cutoff Current
Test Condition(s)
-VCE=50 V, IB=0V -VCB=100 V, IE=0V -VCB=100 V, IE=0V, Tj=150°C
Min
-
Typ
-
Max
-1 -0.5
Unit
mA mA
-5 -100 40 15 5 3 -1 -1.5 250 -150 1 3 2.5 MHz mA V V -
Emitter Cutoff Current Collector Emitter Breakdown Voltage Base Emitter Voltage (*)
-VBE=5 V, IC=0 IC=10 m A, IB=0V
(*) Pulse conditions : tp < 300 µs, δ =1.5%
-IC=5 A, -VCE=4 V -IC=0.5 A, -VCE=4 V DC Current Gain (*) -IC=5 A, -VCE=4V -IC=10 A, -VCE=4V Collector-Emitter saturation -IC=5 A, -IB=0.5 A Voltage (*) -IC=10A, -IB=2.5 A Base...
