BD912

isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·Complement to Type BD911 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -15 IB Base Current -5 PC Collector Power Dissipation @ TC=25℃ 90 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.38 ℃/W BD912 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2.5A VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -2.5A VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -4V ICBO Collector Cutoff Current VCB= -100V;IE= 0 ICEO Collector Cutoff Current VCE= -50V;IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0...