BD743C

SEMICONDUCTORS BD743 – A – B – C SILICON POWER TRANSISTORS The BD743 series are NPN power transistors in a TO-220 envelope. They are intended for use in power linear and switching application. High current capability and high power dissipation. PNP complements are BD744-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C TC = 25°C TA = 25°C Value 50 70 900 110 45 60 80 100 5 Unit VCBO Collector-Base Voltage (IE=0) V www.DataSheet.net/ VCEO Collector-Emitter Voltage (IB=0) V VEBO Emitter-Base Voltage (IC=0) V IC Collector Current 15 A ICM Collector Peak Current 20 A IB Base Current 5 90 2 150 -65 to +150 A PT TJ Ts Power Dissipation Junction Temperature Storage Temperature range W °C 25/09/2012 COMSET SEMICONDUCTORS 1|4 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BD743 – A – B – C THERMAL CHARACTERISTICS Symbol RthJ-MB RthJ-A Ratings Junction To Case Thermal Resistance Junction To Free Air Thermal Resistance Value 1.4 62.5 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current ICEO Collector Cutoff Current VBE= 0 VCB = 50 V VBE= 0 VCB = 70 V VBE= 0 VCB = 90 V VBE= 0 VCB = 100 V VBE= 0 VCB = 50 V VBE= 0 VCB = 70 V VBE= 0 VCB = 90 V VBE= 0 V...