BD683

NPN BD683 – BD683A SILICON DARLINGTON POWER TRANSISTORS The BD683 and BD683A are NPN eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD684 and BD684A. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IBM PT TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Ratings Value 120 120 5 4 6 0.1 40 150 -65 to +150 Unit V V V A A W °C °C www.DataSheet.net/ Collector Current Base current peak value Total power Dissipation Junction Temperature Storage Temperature @ Tmb = 25°C IC ICM THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-a Ratings Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air Value 3.12 100 Unit K/W K/W 23/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BD683 – BD683A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICEO IEBO VCE(SAT) hFE VBE hfe fhfe VF I(SB) Ratings Collector cut-off current Test Condition(s) Min 750 10 0,8 - Typ 60 1,5 0,8 4,5 Max 0,2 2 0,5 5 2,5 2,8 2,5 2 8 Unit mA mA mA V V kHz V A µs ton toff (*) Measured under pulse conditions :tP <300µs, δ <2%. IE=0, VCB= 120 V IE=0, VCB= 120V, Tj= 150°C Collector cut-off current IB=0,VCE= 1/2VCEOMAX Emitter cut-offcurrent IC=0, VEB=5 V Collector-Emitter saturation IC=1.5 A, IB=30 mA BD683 Voltage (*) IC=2 A, IB=40 mA BD683A VCE=3 ...