SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a m...
SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER
TRANSISTORS
NPN epitaxial-base
transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.
PNP complements are BD644, BD646, BD648, BD650 and BD652 Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651
Value
60 80 100 120 140 45 60 80 100 120
Unit
VCBO
Collector-Base Voltage
www.DataSheet.net/
V
VCEO
Collector-Emitter Voltage
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
8
A
ICM
Collector Peak Current
12
A
17/10/2012
COMSET SEMICONDUCTORS
1|5
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651
Value
Unit
IB
Base Current
300
mA
PT
Power Dissipation
@ Tmb < 25°
62.5
Watts
TJ
Junction Temperature
150 °C -65 to +150
www.DataSheet.net/
Ts
Storage Temperature range
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
RthJ-MB RthJ-A
Ratings
From junction to mounting base From junction to ambient in free air
Value
2 62.5
Unit
K...