BD410

SEMICONDUCTORS BD410 NPN EPITAXILA SILICON POWER TRANSISTORS They are silicon epitaxial planar NPN power transistors mounted in a TO-126 plastic package. AF-amplifier for high supply voltage They are intended for control circuit, vertical output stages in TVsets, and general purpose applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM PT tJ ts tL Collector-Base Voltage Ratings Value 500 www.DataSheet.net/ Unit V V V A A W Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Total Power Dissipation Junction Temperature Storage Temperature range 325 5 1 1.5 Ta =25°C Tc =25°C 1.25 20 -55 to +125 -55 to +125 260 °C Lead Temperature 1.6 mm From Case For 10 Secondes 25/09/2012 05/11/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BD410 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO ICES VCE(SAT) VBE hFE Ratings Collector-Emitter Breakdown Voltage (*) Collector-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector Cutoff Current Collector-Emitter saturation Voltage (*) Base-Emitter Voltage (*) DC Current Gain (*) Test Condition(s) Min 325 500 5 25 30 20 Typ - Max 100 0.5 1.5 240 - Unit V V V µA V V - IC= 10 mA, IB= 0 IC= 0.5 mA, IE= 0 IE= 50 µA, IC= 0 VCE = 300 V, IB= 0 IC= 100 mA, IB= 10 mA IC= 100 mA, IB= 10 mA IC= 5 mA, VCE= 10 V IC= 50 mA, VCE= 10 V IC= 100 mA, VCE= 10 V www.DataSheet.net/ SWITCHIN...