BD246A

BD246, A, B, C PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS The BD246 series are PNP power transistors in a TO3PN envelope. They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD245, A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Ratings Collector-Emitter Voltage (IC = -30mA) BD246 BD246A BD246B BD246C BD246 BD246A BD246B BD246C IC ICM Tmb = 25° C Value -45 -60 -80 -100 -55 -70 -90 -115 -5.0 -10 -15 -3 80 -65 to +150 -65 to +150 Unit V www.DataSheet.net/ VCER VEBO IC IB PT TJ TS Collector-Emitter Voltage (RBE = 100 Ω) Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature V V A A Watts °C THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings Junction to Case Thermal Resistance Junction to free air Thermal Resistance Value 1.56 42 Unit °C / W °C / W 25/09/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ BD246, A, B, C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICES Ratings Collector- Emitter Cut-off Current VCE VCE VCE VCE Test Condition(s) Min - Typ - Mx -0.4 Unit mA = -55 V , VBE = 0 = -70 V , VBE = 0 = -90 V , VBE = 0 = -115 V , VBE = 0 ICEO Collector Cut-off Current Emitter Cut-off Current Collector- Emitter Breakdown Voltage (*) VCE = -30 V , IB = 0 VCE = -60 V , IB = 0 VE B = -5 V , IC = 0 BD246 BD246A BD246B BD246C BD246 BD246A BD246B BD246C - - -0.7 mA ...