BD245 – A – B – C NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS
They are the power transistors for power amplifier ...
BD245 – A – B – C
NPN SINGLE-DIFFUSED MESA SILICON POWER
TRANSISTORS
They are the power
transistors for power amplifier and high-speed-switching applications. The complementary is BD246, A, B, C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BD245 BD245A BD245B BD245C BD245 BD245A BD245B BD245C IC ICM Tmb = 25° C
Value
45 60 80 100 55 70 90 115 5.0 10 15 3 80 -65 to +150 -65 to +150
Unit
VCEO
Collector-Emitter Voltage (IC = -30mA)
www.DataSheet.net/
V
VCER VEBO IC IB PT TJ TS
Collector-Emitter Voltage (RBE = 100 Ω) Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
V V A A Watts °C
THERMAL CHARACTERISTICS Symbol
RthJC RthJA
Ratings
Junction to Case Thermal Resistance Junction to free air Thermal Resistance
Value
1.56 42
Unit
°C / W °C / W
22/10/2012
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
BD245 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VCE VCE VCE VCE
Test Condition(s)
= 55 V , VBE = 0 = 70 V , VBE = 0 = 90 V , VBE = 0 = 115 V , VBE = 0 BD245 BD245A BD245B BD245C BD245 BD245A BD245B BD245C BD245 BD245A BD245B BD245C
Min
Typ
Max
Unit
ICES
Collector- Emitter Cut-off Current
-
-
0.4
mA
ICEO IEBO VCEO
Collector Cut-off Current
VCE = 30 V , IB = 0 VCE = 60 V , IB = 0
45 60 80 100 40 20 4 20 3
-
0.7 1 1 4 1.6 3 -
mA mA V
Emitter Cut-off Current VE B = 5 V , IC = 0 Collector- Emitter I = 30 mA, IB =...