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BD240

Comset Semiconductors

Medium Power Linear/Switching

PNP BD240 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD239, A, B, C are mounted in Jedec TO-220 pla...


Comset Semiconductors

BD240

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Description
PNP BD240 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD239, A, B, C are mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The NPN complements are BD239, A, B, C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD240 BD240A BD240B BD240C BD240 BD240A BD240B BD240C BD240 BD240A BD240B BD240C Value -45 -60 -80 -100 -55 -70 -90 -115 -45 -60 80 -100 -5.0 -3 -7 0.5 30 30 150 -65 to +150 Unit VCEO Collector-Emitter Voltage www.DataSheet.net/ V VCER Collector-Emitter Voltage (RBE = 100 Ω) V VCBO VEBO IC IB PT TJ TS Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature @ Tamb = 25° C @ Tcase = 25° C IC ICM V V A A W W °C THERMAL CHARACTERISTICS Symbol RthJ-amb RthJ-case Ratings Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case Value 70 4.17 Unit °C/W °C/W 22/10/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BD240 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCE=-30 V VCE=-30 V VCE=-60 V VCE=-60 V Min -45 -60 -80 -100 40 Typ - Max Unit ICEO IEBO ICES VCEO(sus) hFE VCE(SAT) VBE(on) hfe fT (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 22/10/2012 BD240 BD240A Collector Cutoff Current BD240B BD240C BD240 BD240A Emitter Cutoff Curr...




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