BD239B

NPN BD239 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD239, A, B, C are mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The PNP complements are BD240, A, B, C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD239 BD239A BD239B BD239C BD239 BD239A BD239B BD239C BD239 BD239A BD239B BD239C Value 45 60 80 100 55 70 90 115 45 60 80 100 5.0 3 7 0.5 30 30 150 -65 to +150 Unit VCEO Collector-Emitter Voltage www.DataSheet.net/ V VCER Collector-Emitter Voltage (RBE = 100 Ω) V VCBO VEBO IC IB PT TJ TS Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature @ Tamb = 25° C @ Tcase = 25° C IC ICM V V A A W W °C THERMAL CHARACTERISTICS Symbol RthJ-amb RthJ-case Ratings Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case Value 70 4.17 Unit °C/W °C/W 22/10/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BD239 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCE=30 V VCE=30 V VCE=60 V VCE=60 V Min 45 60 80 100 40 Typ - Max Unit ICEO IEBO ICES VCEO(sus) hFE VCE(SAT) VBE(on) hfe fT (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 22/10/2012 BD239 BD239A Collector Cutoff Current BD239B BD239C BD239 BD239A Emitter Cutoff Current VBE=5 V BD239B BD2...