P-Channel MOSFET
AP6681GMT-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ SO-8 Compatible ▼ Simple Drive...
Description
AP6681GMT-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ SO-8 Compatible ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G
P-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
-30V 3.1mΩ -135A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The PMPAK 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink.
®
D
D
D D
S
S
S
G
® PMPAK 5x6
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip), V GS @ 10V Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current
1 3 3
Rating -30 +20 -135 -33 -26.4 -200 83.3 5 -55 to 150 -55 to 150
Units V V A A A A W W ℃ ℃
Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient
3
Value 1.5 25
Unit ℃/W ℃/W 1 201211221
Data and specifications subject to change without notice
Free Datasheet http://www.datasheet4u.com/
AP6681GMT-HF
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Q...
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