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BC109B Dataheets PDF



Part Number BC109B
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description (BC107 - BC109) Low noise general purpose audio amplifiers
Datasheet BC109B DatasheetBC109B Datasheet (PDF)

NPN BC107 – BC108 – BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. The complementary PNP are BC177, BC178 and BC179. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM PD TJ TStg Collector-Emitter Voltage (IB =0) Collector-Base Voltage.

  BC109B   BC109B



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NPN BC107 – BC108 – BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. The complementary PNP are BC177, BC178 and BC179. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM PD TJ TStg Collector-Emitter Voltage (IB =0) Collector-Base Voltage (IE =0) Emitter-Base Voltage (IC =0) Collector Current Collector Peak Current Total Power Dissipation @ Tamb = 25° Junction Temperature Storage Temperature range BC107 45 50 6 BC108 20 30 5 100 200 300 175 -65 to +150 BC109 20 30 5 Unit V V V mA mA mW °C °C www.DataSheet.net/ ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol Ratings Test Condition(s) VCB = 20 V IE = 0 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 Min - Typ - Max 15 Unit nA ICBO Collector Cutoff Current VCB = 20 V IE = 0 V Tj = 150°C VEB = 5 V IC = 0 IC = 10 mA IB = 0 IC = 10 µA VBE = 0 - - 15 µA IEBO Emitter Cutoff Current Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage 45 20 20 50 30 30 5 - 50 - nA VCEO V VCBO V VEBO Emitter-Base Breakdown IE = 10 µA IC = 0 Voltage V 25/09/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BC107 – BC108 – BC109 Symbol Ratings Test Condition(s) IC = 10 mA IB = 0.5 mA IC = 100 mA IB = 5 mA IC = 10 mA IB = 0.5 mA IC = 100 mA IB = 5 mA IC = 2 mA VCE = 5 V VBE Base-Emitter Voltage IC = 10 mA VCE = 5 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107A BC108A BC109A BC107B BC108B BC109B BC107C BC108C BC109C BC107A BC108A BC109A BC107B BC108B BC109B BC107C BC108C BC109C BC107 BC108 BC109 Min - Typ 0.09 Max 0.25 Unit VCE(SAT) Collector-Emitter saturation Voltage V 0.2 0.6 - 0.70 V VBE(SAT) Base-Emitter Saturation Voltage - 0.9 - 0.55 0.65 0.7 V - - 0.77 - 90 - www.DataSheet.net/ IC= 10 µA VCE= 5 V 40 150 - 100 270 - hFE DC Current Gain (*) 110 - 220 IC= 2 mA VCE= 5 V 200 - 450 420 - 800 fT Transition frequency IC =10 mA, VCE =5V f = 100 MHz 100 - 4 10 10 4 6 MHz F Noise figure IC = 200 µA VCE BC107 =5V BC108 f = 1kHz Rg= 2kΩ B = 200Hz BC109 IE = 0 VCB = 10 V f = 1MHz BC177 BC178 BC179 db CC Collector capacitance pF 25/09/2012 COMSET SEMICONDUCTORS 2/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BC107 – BC108 – BC109 THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to mounting base Thermal Resistance, Junction to ambient in free air Value 500 200 Unit °C/W °C/W MECHANICAL DATA CASE TO-18 DIMENSIONS (mm) min A B C D E F G H I L Pin 1 : Pin 2 : Pin 3 : Case : 12.7 0.9 2.54 45° max 0.49 5.3 4.9 5.8 1.2 1.16 - www.DataSheet.net/ emitte.


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