Document
NPN BC107 – BC108 – BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. The complementary PNP are BC177, BC178 and BC179. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC ICM PD TJ TStg Collector-Emitter Voltage (IB =0) Collector-Base Voltage (IE =0) Emitter-Base Voltage (IC =0) Collector Current Collector Peak Current Total Power Dissipation @ Tamb = 25° Junction Temperature Storage Temperature range
BC107
45 50 6
BC108
20 30 5 100 200 300 175 -65 to +150
BC109
20 30 5
Unit
V V V mA mA mW °C °C
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ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s) VCB = 20 V IE = 0 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109
Min
-
Typ
-
Max
15
Unit
nA
ICBO
Collector Cutoff Current
VCB = 20 V IE = 0 V Tj = 150°C VEB = 5 V IC = 0 IC = 10 mA IB = 0 IC = 10 µA VBE = 0
-
-
15
µA
IEBO
Emitter Cutoff Current Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage
45 20 20 50 30 30 5
-
50 -
nA
VCEO
V
VCBO
V
VEBO
Emitter-Base Breakdown IE = 10 µA IC = 0 Voltage
V
25/09/2012
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN BC107 – BC108 – BC109
Symbol Ratings Test Condition(s)
IC = 10 mA IB = 0.5 mA IC = 100 mA IB = 5 mA IC = 10 mA IB = 0.5 mA IC = 100 mA IB = 5 mA IC = 2 mA VCE = 5 V VBE Base-Emitter Voltage IC = 10 mA VCE = 5 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107A BC108A BC109A BC107B BC108B BC109B BC107C BC108C BC109C BC107A BC108A BC109A BC107B BC108B BC109B BC107C BC108C BC109C BC107 BC108 BC109
Min
-
Typ
0.09
Max
0.25
Unit
VCE(SAT)
Collector-Emitter saturation Voltage
V 0.2 0.6
-
0.70
V
VBE(SAT)
Base-Emitter Saturation Voltage
-
0.9
-
0.55
0.65
0.7 V
-
-
0.77
-
90
-
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IC= 10 µA VCE= 5 V
40
150
-
100
270
-
hFE
DC Current Gain (*)
110
-
220
IC= 2 mA VCE= 5 V
200
-
450
420
-
800
fT
Transition frequency
IC =10 mA, VCE =5V f = 100 MHz
100 -
4
10 10 4 6
MHz
F
Noise figure
IC = 200 µA VCE BC107 =5V BC108 f = 1kHz Rg= 2kΩ B = 200Hz BC109 IE = 0 VCB = 10 V f = 1MHz BC177 BC178 BC179
db
CC
Collector capacitance
pF
25/09/2012
COMSET SEMICONDUCTORS
2/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN BC107 – BC108 – BC109
THERMAL CHARACTERISTICS Symbol
RthJ-a RthJ-c
Ratings
Thermal Resistance, Junction to mounting base Thermal Resistance, Junction to ambient in free air
Value
500 200
Unit
°C/W °C/W
MECHANICAL DATA CASE TO-18
DIMENSIONS (mm)
min A B C D E F G H I L Pin 1 : Pin 2 : Pin 3 : Case : 12.7 0.9 2.54 45° max 0.49 5.3 4.9 5.8 1.2 1.16 -
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emitte.