2N6282 – 2N6283 – 2N6284 NPN SILICON DARLINGTON POWER TRANSISTOR
The 2N6282, 2N6283 and 2N6284 are mounted in TO-3 metal...
2N6282 – 2N6283 – 2N6284
NPN SILICON DARLINGTON POWER
TRANSISTOR
The 2N6282, 2N6283 and 2N6284 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequency switching applications. The complementary
PNP are 2N6285, 2N6286, 2N6287 Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
Ratings
Collector-Emitter Voltage (IB=0) 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284
Value
60 80 100 60 80 100 5
Unit
V
VCBO
Collector-Base Voltage (IE=0)
www.DataSheet.net/
V
VEBO
Emitter-Base Voltage (IC=0)
V
IC
Collector Current
20 A 40
ICM
Collector Peak Current
IB
Base Current
0.5
A
PT
Power Dissipation
@ TC = 25°
160
W/°C
TJ
Junction Temperature
200
°C
TS
Storage Temperature
-65 to +200
°C
04/12/2012
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
2N6282 – 2N6283 – 2N6284
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance Junction-Case
Value
1.09
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Emitter Cutoff Current
Test Condition(s)
2N6282 IC= 200 m A IB= 0 VCE= 30 V, IB= 0 VCE= 40 V, IB= 0 VCE= 50 V, IB= 0 2N6283 2N6284
Min
60 80 100 -
Typ
-
Max
1
Unit
VCEO(SUS)
V
ICEO
IEBO
ICEX
Collector Cutoff Current
VCE(SA...