NPN 2N5320 – 2N5321 SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N5320 and 2N5321 are NPN transistors mounted in TO-39 met...
NPN 2N5320 – 2N5321 SILICON PLANAR EPITAXIAL
TRANSISTORS
The 2N5320 and 2N5321 are
NPN transistors mounted in TO-39 metal case . They are especially intended for high-voltage medium power applications in industrial and commercial equipements. Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VCEV VEBO IC IB
Ratings
Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (VBE = 1.5V) Emitter-Base Voltage (IC = 0) Collector Current Base Current @ Tamb = 25°
www.DataSheet.net/
Value
2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 75 50 100 75 100 75 6 5 2 1 1
Unit
V V V V A A
PD
Total Power Dissipation @ Tcase= 25°
Watts 10 -65 to +200 -65 to +200 °C °C
TJ TStg
Junction Temperature Storage Temperature range
THERMAL CHARACTERISTICS Symbol
RthJ-a RthJ-c
Ratings
Thermal Resistance, Junction to ambient Thermal Resistance, Junction to case
Value
175 17.5
Unit
°C/W °C/W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf http://www.DataSheet4U.co.kr/
NPN 2N5320 – 2N5321
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO IEBO VCEO VCEV VEBO
Ratings
Collector Cutoff Current Emitter Cutoff Current Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage DC Current Gain Collector-Emitter saturation Voltage Base-Emitter Voltage Transition frequency
Test Condition(s)
VCB = 80 V, IE...
