2N3700

NPN 2N3700 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3700 are NPN transistors mounted in TO-18 metal package with the collector connected to the case . They are intended for small signal, low noise industrial applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current @ Tamb = 25° Total Power Dissipation Junction Temperature Storage Temperature range @ Tcase= 25° www.DataSheet.net/ Value 80 140 7 1 0.5 1.8 1 200 -65 to +200 Unit V V V A W °C °C @ Tcase<100° THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case Value 350 97 Unit °C/ W °C/ W 17/10/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N3700 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICBO IEBO VCEO (*) VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB=90 V, IE=0V VCB=90 V, IE=0V, Tj=150°C VBE=5.0 V, IC=0 IC=30 mA, IB=0 IC=100 µA, IE=0 IE=100 µA, IC=0 IC=0.1 mA, VCE=10 V IC=10 mA, VCE=10 V IC=150 mA, VCE=10 V IC=500 mA, VCE=10 V IC=1A, VCE=10 V IC=150 mA, VCE=10 V Tamb = -55° IC=150 mA, IB=15 mA IC=500 mA, IB=50 mA www.DataSheet.net/ Min 80 140 7 50 90 100 50 15 40 80 25 Typ 100 12 60...