DatasheetsPDF.com

2N3442

Part Number	2N3442
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Nov 30, 2012
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VC...
Datasheet	2N3442 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 140V(Min.
) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 5.
0V(Max)@ IC = 10A APPLICATIONS ·Designed for use in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak 15 A IB Base Current-Continuous 7 A PC Collector Power Dissipation@TC=25...

Similar Datasheet

2N340 N-P-N GROWN SILICON TRANSISTORS - New Jersey Semi-Conductor
2N341 N-P-N GROWN SILICON TRANSISTORS - New Jersey Semi-Conductor
2N3410DCSM Dual Bipolar NPN Devices - Semelab Plc
2N3414 NPN SILICON TRANSISTOR - Micro Electronics
2N3414 NPN SILICON TRANSISTOR - Central Semiconductor
2N3415 NPN General Purpose Amplifier - Fairchild Semiconductor
2N3415 NPN SILICON TRANSISTOR - Central Semiconductor
2N3415 Silicon NPN Transistor - NTE
2N3416 NPN Amplifier - Fairchild Semiconductor
2N3416 NPN Amplifier - MCC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)