DatasheetsPDF.com

2N3439 Dataheets PDF



Part Number 2N3439
Manufacturers Comset Semiconductor
Logo Comset Semiconductor
Description Transistor
Datasheet 2N3439 Datasheet2N3439 Datasheet (PDF)

NPN 2N3439 – 2N3440 HIGH VOLTAGE TRANSISTOR C The 2N3439 and 2N3440 are high voltage silicon epitaxial transistors mounted in TO-39 metal package. They are intended for use in power amplifier, in consumer and industrial line-operated applications. These devices are particularity suited as drives in high voltage low current inverters, switching and series regulators. Compliance to RoHS. B E ABSOLUTE MAXIMUM RATINGS Value 2N3439 www.DataSheet.net/ Symbol VCEO VCBO VEBO IC IB PD TJ TStg Ratin.

  2N3439   2N3439



Document
NPN 2N3439 – 2N3440 HIGH VOLTAGE TRANSISTOR C The 2N3439 and 2N3440 are high voltage silicon epitaxial transistors mounted in TO-39 metal package. They are intended for use in power amplifier, in consumer and industrial line-operated applications. These devices are particularity suited as drives in high voltage low current inverters, switching and series regulators. Compliance to RoHS. B E ABSOLUTE MAXIMUM RATINGS Value 2N3439 www.DataSheet.net/ Symbol VCEO VCBO VEBO IC IB PD TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation IB = 0 IE = 0 IC = 0 2N3440 250 300 7 1 500 1 10 200 -65 to +200 Unit V V V A mA W °C 350 450 Tamb = 25° Tcase = 25° Junction Temperature Storage Temperature range THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient Thermal Resistance, Junction to case Value 175 35 Unit °C/W °C/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N3439 – 2N3440 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol ICBO ICEO ICEX IEBO VCEO hFE VCE(SAT) VBE(SAT) fT Cob Ratings Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-emitter Breakdown Voltage DC Current Gain Collector-Emitter saturation Voltage Base-Emitter saturation Voltage Transition frequency Output Capacitance Test Condition(s) VCB = 360 V, IE = 0 VCB = 250 V, IE = 0 VCE = 300 V, IB = 0 VCE = 200 V, IB = 0 VCE = 450 V, VBE = -1.5 V VCE = 300 V, VBE = -1.5 V VBE = 6 V, IC = 0 IC = 50 mA, IB = 0 IC = 2 mA, VCE = 10 V IC = 20 mA, VCE = 10 V IC = 50 mA, IB = 4 mA www.DataSheet.net/ Min 350 250 30 40 15 - Typ - Max 20 20 50 500 20 160 0.5 1.3 10 Unit µA µA µA µA V V V MHz pF 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 2N3439 2N3439 2N3440 IC = 50 mA, IB = 4 mA IC = 10 mA, VCB = 10 V f = 5 MHz VCB = 10 V, f = 1MHz 08/08/2012 COMSET SEMICONDUCTORS 2/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N3439 – 2N3440 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min max 9.39 8.50 6.60 0.53 0.88 2.66 5.33 0.86 1.02 www.DataSheet.net/ A B C D E F G H J K L 8.50 7.74 6.09 0.40 2.41 4.82 0.71 0.73 12.70 42° 48° Pin 1 : Pin 2 : Pin 3 : Case : Emitter Base Collector Collector Revised August 2012           Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, includin.


2N3440 2N3439 2N3440


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)