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NPN 2N3439 – 2N3440 HIGH VOLTAGE TRANSISTOR
C
The 2N3439 and 2N3440 are high voltage silicon epitaxial transistors mounted in TO-39 metal package. They are intended for use in power amplifier, in consumer and industrial line-operated applications. These devices are particularity suited as drives in high voltage low current inverters, switching and series regulators. Compliance to RoHS.
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ABSOLUTE MAXIMUM RATINGS Value 2N3439
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Symbol
VCEO VCBO VEBO IC IB PD TJ TStg
Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation IB = 0 IE = 0 IC = 0
2N3440
250 300 7 1 500 1 10 200 -65 to +200
Unit
V V V A mA W °C
350 450
Tamb = 25° Tcase = 25°
Junction Temperature Storage Temperature range
THERMAL CHARACTERISTICS Symbol
RthJ-a RthJ-c
Ratings
Thermal Resistance, Junction to ambient Thermal Resistance, Junction to case
Value
175 35
Unit
°C/W °C/W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN 2N3439 – 2N3440
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
ICBO ICEO ICEX IEBO VCEO hFE VCE(SAT) VBE(SAT) fT Cob
Ratings
Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-emitter Breakdown Voltage DC Current Gain Collector-Emitter saturation Voltage Base-Emitter saturation Voltage Transition frequency Output Capacitance
Test Condition(s)
VCB = 360 V, IE = 0 VCB = 250 V, IE = 0 VCE = 300 V, IB = 0 VCE = 200 V, IB = 0 VCE = 450 V, VBE = -1.5 V VCE = 300 V, VBE = -1.5 V VBE = 6 V, IC = 0 IC = 50 mA, IB = 0 IC = 2 mA, VCE = 10 V IC = 20 mA, VCE = 10 V IC = 50 mA, IB = 4 mA
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Min
350 250 30 40 15 -
Typ
-
Max
20 20 50 500 20 160 0.5 1.3 10
Unit
µA µA µA µA V V V MHz pF
2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 2N3439 2N3439 2N3440
IC = 50 mA, IB = 4 mA IC = 10 mA, VCB = 10 V f = 5 MHz VCB = 10 V, f = 1MHz
08/08/2012
COMSET SEMICONDUCTORS
2/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN 2N3439 – 2N3440
MECHANICAL DATA CASE TO-39
DIMENSIONS (mm) min max 9.39 8.50 6.60 0.53 0.88 2.66 5.33 0.86 1.02
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A B C D E F G H J K L
8.50 7.74 6.09 0.40 2.41 4.82 0.71 0.73 12.70 42°
48°
Pin 1 : Pin 2 : Pin 3 : Case :
Emitter Base Collector Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, includin.