Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3054 2N3054A
DESCRIPTION ¡¤With TO-66 p...
Inchange Semiconductor
Product Specification
Silicon
NPN Power
Transistors
2N3054 2N3054A
DESCRIPTION ¡¤With TO-66 package APPLICATIONS ¡¤Designed for general purpose switching and amplifier applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=25¡æ )
SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current 2N3054 Power dissipation 2N3054A Junction temperature Storage temperature TC=25¡æ 75 200 -65~200 ¡æ ¡æ Open emitter
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CONDITIONS
VALUE 90 55 7 4 2 25
UNIT V V V A A W
Open base Open collector
THERMAL CHARACTERISTICS
SYMBOL PARAMETER 2N3054 Rth j-C Thermal resistance junction to case 2N3054A 2.33 MAX 7.0 ¡æ/W UNIT
Datasheet pdf - http://www.DataSheet4U.co.kr/
Inchange Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=0.5A ;IB=50mA IC=3A; IB=1A IC=0.5A ; VCE=4V VCE=90V;VBE(off)=1.5V TC=150¡æ VCE=30V; IB=0 VEB=7V; IC=0 IC=0.1A ; VCE=10V IC=1A ; VCE=2V
www.DataSheet.net/
2N3054 2N3054A
SYMBOL VCE...