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2N2905

Comset Semiconductor

SILICON PLANAR EPITAXIAL TRANSISTORS

PNP 2N2905 – 2N2905A SILICON PLANAR EPITAXIAL TRANSISTOR The 2N2905 and 2N2905A are PNP transistors mounted in TO-39 met...


Comset Semiconductor

2N2905

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Description
PNP 2N2905 – 2N2905A SILICON PLANAR EPITAXIAL TRANSISTOR The 2N2905 and 2N2905A are PNP transistors mounted in TO-39 metal case . They are intended for high speed switching and general purpose applications. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD PD TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage www.DataSheet.net/ Ratings 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 Value -60 -40 -60 -60 -5 -5 -600 0.6 Unit V V V mA Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range @ Tamb = 25° @ Tcase= 25° Watts 3 200 -65 to +200 °C °C THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient in free 2N2905A air 2N2905 2N2905A Thermal Resistance, Junction to case 2N2905 Value 58.3 292 Unit °C/W °C/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP 2N2905 – 2N2905A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min -60 -40 -60 -5 75 35 100 50 100 75 100 40 50 30 200 - Typ - Max -10 -20 -10 -20 -50 300 120 -0.4 -1.6 Unit nA µA nA V V V ICBO ICEX VCEO VCBO VEBO hFE VCE(SAT) VBE(SAT) fT td tr CCBO CEBO 2N2905A VCB=-50 V IE=0 2N2905 Collector Cutoff Current 2N2905A VCB=-50 V, IE=0 Tj=150°C 2N2905 2N2905A VCE=-30 V Collector Cutoff Current VBE=0.5V 2N2905 2N2905A Collec...




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