PNP 2N2905 – 2N2905A SILICON PLANAR EPITAXIAL TRANSISTOR
The 2N2905 and 2N2905A are PNP transistors mounted in TO-39 met...
PNP 2N2905 – 2N2905A SILICON PLANAR EPITAXIAL
TRANSISTOR
The 2N2905 and 2N2905A are
PNP transistors mounted in TO-39 metal case . They are intended for high speed switching and general purpose applications. Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC PD PD TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
www.DataSheet.net/
Ratings
2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905
Value
-60 -40 -60 -60 -5 -5 -600 0.6
Unit
V V V mA
Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range @ Tamb = 25° @ Tcase= 25°
Watts 3 200 -65 to +200 °C °C
THERMAL CHARACTERISTICS Symbol
RthJ-a RthJ-c
Ratings
Thermal Resistance, Junction to ambient in free 2N2905A air 2N2905 2N2905A Thermal Resistance, Junction to case 2N2905
Value
58.3 292
Unit
°C/W °C/W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP 2N2905 – 2N2905A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
-60 -40 -60 -5 75 35 100 50 100 75 100 40 50 30 200 -
Typ
-
Max
-10 -20 -10 -20 -50 300 120 -0.4 -1.6
Unit
nA µA nA V V V
ICBO
ICEX VCEO VCBO VEBO
hFE
VCE(SAT)
VBE(SAT)
fT td tr CCBO CEBO
2N2905A VCB=-50 V IE=0 2N2905 Collector Cutoff Current 2N2905A VCB=-50 V, IE=0 Tj=150°C 2N2905 2N2905A VCE=-30 V Collector Cutoff Current VBE=0.5V 2N2905 2N2905A Collec...