BDY26 – 183T2 BDY27 – 184T2 BDY28 – 185T2 NPN SILICON TRANSISTORS, DIFFUSED MESA.
They are NPN transistors mounted in Je...
BDY26 – 183T2 BDY27 – 184T2 BDY28 – 185T2
NPN SILICON
TRANSISTORS, DIFFUSED MESA.
They are
NPN transistors mounted in Jedec TO-3. LF Large Signal Power Amplification. High Current Fast Switching. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO Collector-Emitter Voltage
Ratings
BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2
Value
180 200 250 300 400 500 10 6 3 87.5 200 -65 to +200
Unit
V
www.DataSheet.net/
VCBO VEBO IC IB PTOT TJ TS
Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
V V A A W °C
@ TC = 25°
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
2
Unit
°C/W
1|3 24/09/2012 COMSET SEMICONDUCTORS
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDY26 – 183T2 BDY27 – 184T2 BDY28 – 185T2
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BDY26, 183T2 BDY27, 184T2 BDY28A, 185T2A BDY28B, 185T2B BDY28C, 185T2C BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26 BDY27 BDY28 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2
Min
180 200 250 250 220 300 400 500 15 30 75 10 -
Typ MAx Unit
55 65 90 20 45 82 0.3 1.5 0.6 V 1.0 mA 1.0
VCEO(BR)
Collector-Emitter Breakdown Voltage (*)
IC=50 mA IB=0
V
V(BR)CBO
Collector-Base Breakdown Voltage (*) Collector-Emitter Cutoff Current Emitter-Base Cutoff Current
IC=3 mA VCE=180 V VCE=200 V VCE=250 V...
