2N6111

® 2N6111 SILICON PNP SWITCHING TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s PNP TRANSISTOR APPLICATIONS: s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N6111 is an Epitaxial-Base PNP silicon transistor in Jedec TO-220 plastic package. It is intended for a wide variety of medium power switching and linear applications. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEX Collector-Emitter Voltage (RBE = 100 Ω) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current IB Base Current Ptot Total Dissipation at Tc = 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature December 2003 Value -40 -40 -30 -5 -7 -3 40 -65 to 150 150 Unit V V V V A A W oC oC 1/4 2N6111 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 3.12 70 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEX Collector Cut-off VCE = -40 V Current (VBE = - 1.5V) VCE = -30 V TC = 150 oC ICEO Collector Cut-off Current (IB = 0) IEBO Emitter Cut-off Current (IC = 0) VCEO(sus)∗ Collector-Emitter Sustaining Voltage (IB = 0) VCER(sus)∗ Collector-Emitter Sustaining Voltage (IC = 0) VCE(sat)∗ Collector-Emitter Saturation Voltage VCE = -20 V VEB = -5 V IC = -0.1 A IC = -0.1 A IC = -2 A IC = -7 A RBE = 100 Ω IB = -0.2 A IB...