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IS43R16400B

Part Number	IS43R16400B
Manufacturer	ISSI
Description	Four internal banks for concurrent operation
Published	Nov 23, 2012
Detailed Description	IS43R16400B 4Mx16 64Mb DDR SDRAM FEATURES • • • • • VDD and VDDQ: 2.5V ± 0.2V (-5, -6) VDD and VDDQ: 2.6V ± 0.1V (-...
Datasheet	IS43R16400B PDF File

Overview

IS43R16400B 4Mx16 64Mb DDR SDRAM FEATURES • • • • • VDD and VDDQ: 2.
5V ± 0.
2V (-5, -6) VDD and VDDQ: 2.
6V ± 0.
1V (-4) SSTL_2 compatible I/O Double-data rate architecture; two data transfers per clock cycle Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs Differential clock inputs (CK and CK) DLL aligns DQ and DQS transitions with CK transitions Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS Four internal banks for concurrent operation Data Mask for write data.
DM masks write data at both rising and...

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IS43R16400B Four internal banks for concurrent operation - ISSI

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