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81RIA120MPBF Dataheets PDF



Part Number 81RIA120MPBF
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Phase Control Thyristors
Datasheet 81RIA120MPBF Datasheet81RIA120MPBF Datasheet (PDF)

80RIA...PbF/81RIA...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 80 A FEATURES • Hermetic glass-metal seal • International standard case TO-209AC (TO-94) • RoHS compliant • Lead (Pb)-free • Designed and qualified for industrial level TO-209AC (TO-94) RoHS COMPLIANT TYPICAL APPLICATIONS • DC motor controls PRODUCT SUMMARY IT(AV) 80 A • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) 50 Hz ITSM www.Dat.

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80RIA...PbF/81RIA...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 80 A FEATURES • Hermetic glass-metal seal • International standard case TO-209AC (TO-94) • RoHS compliant • Lead (Pb)-free • Designed and qualified for industrial level TO-209AC (TO-94) RoHS COMPLIANT TYPICAL APPLICATIONS • DC motor controls PRODUCT SUMMARY IT(AV) 80 A • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) 50 Hz ITSM www.DataSheet.net/ TEST CONDITIONS VALUES 80 UNITS A °C TC 85 125 1900 1990 18 16 400 to 1200 A 60 Hz 50 Hz 60 Hz I2 t VDRM/VRRM tq TJ kA2s V µs °C Typical 110 - 40 to 125 ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 40 80RIA 81RIA 80 120 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 1300 15 IDRM/IRRM MAXIMUM AT TJ = 125 °C mA Document Number: 94392 Revision: 11-Aug-08 For technical questions, contact: [email protected] www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ 80RIA...PbF/81RIA...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 80 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave DC at 75 °C case temperature t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I 2 √t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 80 85 125 1900 1990 1600 Sinusoidal half wave, initial TJ = TJ maximum 1675 18 16 12.7 11.7 180.5 0.99 1.13 2.29 1.84 1.60 200 400 kA2√s V mΩ V mA kA2s A UNITS A °C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse TJ = 25 °C, anode supply 12 V resistive load www.DataSheet.net/ SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt TEST CONDITIONS TJ = 125 °C, Vd = Rated VDRM, ITM = 2 x dI/dt snubber 0.2 µF, 15 Ω, gate pulse: 20 V, 65 Ω, tp = 6 µs, tr = 0.5 µs Per JEDEC standard RS-397, 5.2.2.6. Gate pulse: 10 V, 15 Ω source, tp = 6 µs, tr = 0.1 µs, Vd = Rated VDRM, ITM = 50 Adc, TJ = 25 °C ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate bias: 0 V 25 Ω, tp = 500 µs VALUES 300 UNITS A/µs td tq 1 µs 110 BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = 125 °C exponential to 67 % rated VDRM TJ = 125 °C rated VDRM/VRRM applied VALUES 500 15 UNITS V/µs mA www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94392 Revision: 11-Aug-08 Datasheet pdf - http://www.DataSheet4U.co.kr/ 80RIA...PbF/81RIA...PbF Series Phase Control Thyristors (Stud Version), 80 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TJ = - 40 °C Maximum DC gate current required to trigger IGT TJ = 25 °C TJ = 125 °C TJ = - 40 °C Maximum DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied TJ = TJ maximum, tp ≤ 5 ms TEST CONDITIONS TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES 12 3 3 20 10 270 120 60 3.5 2.5 1.5 6 mA V mA UNITS W A V Vishay High Power Products 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink SYMBOL www.DataSheet.net/ TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 UNITS °C TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Non-lubricated threads 0.30 K/W 0.1 15.5 (137) 14 (120) 130 Mounting torque, ± 10 % Lubricated threads Approximate weight Case style See dimen.


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