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2N6052

ON Semiconductor

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR


Description
2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 100 Vdc (Min) Monolithic Construction with Built−In Bas...



ON Semiconductor

2N6052

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