SIC778A

SiC778A Vishay Siliconix High Performance DrMOS – Integrated Power Stage DESCRIPTION The SiC778 is an integrated power stage solution optimized for synchronous buck applications offering high current, high efficiency and high power density. Packaged in Vishay’s proprietary 6 mm x 6 mm MLP package, SiC778 enables voltage regulator designs to deliver in excess of 40 A per phase current with 91 % peak efficiency. The internal Power MOSFETs utilize Vishay’s state-of-the-art TrenchFET Gen III technology that delivers industry bench-mark performance by significantly reducing switching and conduction losses. The SiC778 incorporates an advanced MOSFET gate driver IC that features high current driving capability, adaptive dead-time control, an integrated bootstrap Schottky diode, and a thermal warning (THDN) that alerts the system of excessive junction temperature. The driver is also compatible with a wide range of PWM controllers and supports tri-state PWM, 3.3 V (SiC778ACD) PWM logic, and skip mode (SMOD) to improve light load efficiency. FEATURES Thermally enhanced PowerPAK® MLP6x6-40L package Industry benchmark MOSFET with integrated Schottky diode Delivers in excess of 40 A continuous current 91 % peak efficiency High frequency operation up to 1 MHz Power MOSFETs optimized for 12 V input stage 3.3 V PWM logic with tri-state and hold-off SMOD logic for light load efficiency boost Low PWM propagation delay (< 20 ns) Thermal monitor flag Enable feature VCIN...