P-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
UTT75P03
Preliminary
-75A, -30V P-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UTT75P03...
Description
UNISONIC TECHNOLOGIES CO., LTD
UTT75P03
Preliminary
-75A, -30V P-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UTT75P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, high current capacity and a minimum on-state resistance.
FEATURES
* RDS(ON) < 7.0mΩ @ VGS=-10V, ID=-30A * High Switching Speed * High Current Capacity
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT75P03L-TA3-T
UTT75P03G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-220
Pin Assignment 123 GDS
Packing Tube
MARKING
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QW-R502-648.b
UTT75P03
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage Drain Current
Continuous Pulsed
TC=25°C TC=125°C
VGSS ID IDM
±20 -75 (Note 2)
-65 -240
V A A A
Avalanche Current Repetitive Avalanche Energy (Note 3) L=0.1mH
IAR EAR
-60 A 180 mJ
Power Dissipation Junction Temperature
TC=25°C
PD TJ
187 -55 ~ +175
W °C
Storage Temperature
TSTG
-55 ~ +175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Package limited.
3. Duty cycle≤1%.
THERMAL DATA
PARAMETER Junction to...
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