UTT70P10

UNISONIC TECHNOLOGIES CO., LTD UTT70P10 Preliminary -70A, -100V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT70P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche.  FEATURES * RDS(ON) < 0.03Ω @ VGS=-10V, ID=-20A * High Switching Speed  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT70P10L-TA3-T UTT70P10G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 123 GDS Packing Tube  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-725.b UTT70P10 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate-Source Voltage VGSS ±20 V Drain Current Continuous Pulsed ID IDM -70 A -90 A Power Dissipation Junction Temperature PD 225 W TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL CHARACTERISTICS PARAMETER Junction to Case SYMBOL θJC RATINGS 0.55 UNIT °C/W  ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown...