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UTT30P04

Unisonic Technologies

P-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary -21A, -40V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT30P04...


Unisonic Technologies

UTT30P04

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Description
UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary -21A, -40V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced technology.  FEATURES * Low on-Resistance * Fast Switching Speed  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT30P04L-TN3-R UTT30P04G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GDS Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-613.b UTT30P04 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATING (TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS -40 ±20 V V Drain Current Continuous Pulsed (Note 2) ID IDM -21 -70 A A Avalanche Current (Note 2) Avalanche Energy Single Pulsed (Note 3) IAS EAS -27 A 36 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4 V/nS Power Dissipation PD 30 W Junction Temperature Storage Temperature Range TJ TSTG +150 -55 ~ +150 °C °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperatur...




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