P-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT18P10
-100V, -18A P-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UTT18P10 is a P-channel...
Description
UNISONIC TECHNOLOGIES CO., LTD UTT18P10
-100V, -18A P-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UTT18P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche.
FEATURES
* RDS(ON) ≤ 180 mΩ @ VGS=-10V, ID=-9.0A RDS(ON) ≤ 210 mΩ @ VGS=-4.5V, ID=-9.0A
* High Switching Speed
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UTT18P10L-TA3-T
UTT18P10G-TA3-T
TO-220
UTT18P10L-TN3-R
UTT18P10G-TN3-R
TO-252
UTT18P10L-P5060-R
UTT18P10G-P5060-R PDFN5×6
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 12345678
Packing
G D S - - - - - Tube
G D S - - - - - Tape Reel
S S S G D D D D Tape Reel
www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd
1 of 9
QW-R502-619.I
UTT18P10
MARKING
TO-220 / TO-252
Power MOSFET
PDFN5×6
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 9
QW-R502-619.I
UTT18P10
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous, VGSS @ -10V TC=25°C
ID
-18
A
Pulsed (Note 3)
IDM
-24
A
Avalanche Energy
Single Pulsed (Note 4)
EAS
39.2
mJ
Power Dissipation (TC=25°C)
TO-220 TO-252 PDFN5×6
100
W
PD
48
W
13
W
Junction Temperature
TJ
+150...
Similar Datasheet