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UNISONIC TECHNOLOGIES CO., LTD UTT18P06
-18.3A, -60V P-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UTT18P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can also withstand high energy in the avalanche.
FEATURES
* RDS(ON) ≤ 0.070 Ω @ VGS= -10V, ID= -18.3A * High Switching Speed
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT18P06L-TA3-T
UTT18P06G-TA3-T
UTT18P06L-TF1-T
UTT18P06G-TF1-T
UTT18P06L-TF2-T
UTT18P06G-TF2-T
UTT18P06L-TF3-T
UTT18P06G-TF3-T
UTT18P06L-TM3-T
UTT18P06G-TM3-T
UTT18P06L-TN3-R
UTT18P06G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F1 TO-220F2 TO-220F
TO-251 TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube Tube Tube Tube Tube Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd
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QW-R502-713.H
UTT18P06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS
-60
V
VGSS
±20
V
Drain Current
Continuous TC=25°C
ID
Pulsed
IDM
-18.3 -73.2
A A
Single Pulsed Avalanche Current (L=0.1mH)
IAS
Single Pulsed Avalanche Energy (L=0.1mH) (Note 3)
EAS
-18.3
A
24.2
mJ
TO-220
90
W
TO-220F
Power Dissipation (Note 4)
TC=25°C
TO-220F1 TO-220F2
PD
39
W
TO-251 TO-252
41
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. Duty cycle ≤ 1 %.
4. See SOA curve for voltage derating.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
TO-220/TO-220F
Junction to Ambient
TO-220F1/TO-220F2
θJA
62.5
TO-251/TO-252
110
TO-220
1.38
Junction to Case
TO-220F/TO-220F1 TO-220F2
θJC
3.19
TO-251/TO-252
3.05 (Note 3)
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNIT °C/W
°C/W
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QW-R502-713.H
UTT18P06
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=-250µA, VGS=0V
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Reverse
ON CHARACTERISTICS
IDSS VDS=-60V, VGS=0V
IGSS
VGS=+20V, VDS=0V VGS=-20V, VDS=0V
Gate Threshold Voltage Static Drain-Source On-State Resistance
VGS(TH) VDS=VGS, ID=-250µA RDS(ON) VGS=-10V, ID=-18.3A (Note 1)
On State Drain Current (Note 1) DYNAMIC PARAMETERS (Note 2)
ID(ON) VGS=-10V, VDS=-5V
Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS
CISS COSS CRSS
VGS=0V, VDS=-25V, f=1.0MHz (Note 2)
Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time
QG QGS QGD tD(ON)
VGS=-10V, VDS=-50V, ID=-1.3A, IG=100μA (Note 3)
Rise Time Turn-OFF Delay Time
tR tD(OFF)
VDD=-30V, ID=-0.5A, RG=2.5Ω (Note 3)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (TC=25°C) (Note 2)
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage Body Diode Reverse Recovery Time
VSD IF=-18.3A, VGS=0V (Note 1)
trr
IF=-18.3A, dIF/dt=100A/µs
Notes: 1. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
2. Guaranteed by design, not subject to production testing
3. Independent of operating temperature
MIN TYP MAX UNIT
-60
V
-1 µA
+100 nA
-100 nA
-1.0
-3.0 V
0.055 0.070 Ω
-30
A
840 1310 pF
95
pF
70
pF
35 40 nC
6
nC
7.0
nC
50
ns
43
ns
300
ns
95
ns
-18.3 A -73.2 A -1.0 -1.5 V 14 61 ns
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UTT18P06
TEST CIRCUITS AND WAVEFORMS
RG VGS
DUT ISD
+
VDS L
-
Driver
dv/dt controlled by RG ISD controlled by pulse period
Same Type as DUT
VGS (Driver)
Peak Diode Recovery dv/dt Test Circuit
D=
Gate Pulse Gate Pulse
Width Period
Power MOSFET
VDD 10V
ISD (DUT)
VDS (DUT)
IFM, Body Diode Forward Current di/dt
IRM Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTT18P06
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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