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UTT18P06 Dataheets PDF



Part Number UTT18P06
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description P-CHANNEL POWER MOSFET
Datasheet UTT18P06 DatasheetUTT18P06 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD UTT18P06 -18.3A, -60V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT18P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can also withstand high energy in the avalanche.  FEATURES * RDS(ON) ≤ 0.070 Ω @ VGS= -10V, ID= -18.3A * High Switching Speed  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT18P06L.

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UNISONIC TECHNOLOGIES CO., LTD UTT18P06 -18.3A, -60V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT18P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can also withstand high energy in the avalanche.  FEATURES * RDS(ON) ≤ 0.070 Ω @ VGS= -10V, ID= -18.3A * High Switching Speed  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT18P06L-TA3-T UTT18P06G-TA3-T UTT18P06L-TF1-T UTT18P06G-TF1-T UTT18P06L-TF2-T UTT18P06G-TF2-T UTT18P06L-TF3-T UTT18P06G-TF3-T UTT18P06L-TM3-T UTT18P06G-TM3-T UTT18P06L-TN3-R UTT18P06G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-713.H UTT18P06 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS -60 V VGSS ±20 V Drain Current Continuous TC=25°C ID Pulsed IDM -18.3 -73.2 A A Single Pulsed Avalanche Current (L=0.1mH) IAS Single Pulsed Avalanche Energy (L=0.1mH) (Note 3) EAS -18.3 A 24.2 mJ TO-220 90 W TO-220F Power Dissipation (Note 4) TC=25°C TO-220F1 TO-220F2 PD 39 W TO-251 TO-252 41 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. Duty cycle ≤ 1 %. 4. See SOA curve for voltage derating.  THERMAL DATA PARAMETER SYMBOL RATINGS TO-220/TO-220F Junction to Ambient TO-220F1/TO-220F2 θJA 62.5 TO-251/TO-252 110 TO-220 1.38 Junction to Case TO-220F/TO-220F1 TO-220F2 θJC 3.19 TO-251/TO-252 3.05 (Note 3) Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. UNIT °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-713.H UTT18P06 Power MOSFET  ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=-250µA, VGS=0V Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse ON CHARACTERISTICS IDSS VDS=-60V, VGS=0V IGSS VGS=+20V, VDS=0V VGS=-20V, VDS=0V Gate Threshold Voltage Static Drain-Source On-State Resistance VGS(TH) VDS=VGS, ID=-250µA RDS(ON) VGS=-10V, ID=-18.3A (Note 1) On State Drain Current (Note 1) DYNAMIC PARAMETERS (Note 2) ID(ON) VGS=-10V, VDS=-5V Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS CISS COSS CRSS VGS=0V, VDS=-25V, f=1.0MHz (Note 2) Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time QG QGS QGD tD(ON) VGS=-10V, VDS=-50V, ID=-1.3A, IG=100μA (Note 3) Rise Time Turn-OFF Delay Time tR tD(OFF) VDD=-30V, ID=-0.5A, RG=2.5Ω (Note 3) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (TC=25°C) (Note 2) Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage Body Diode Reverse Recovery Time VSD IF=-18.3A, VGS=0V (Note 1) trr IF=-18.3A, dIF/dt=100A/µs Notes: 1. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % 2. Guaranteed by design, not subject to production testing 3. Independent of operating temperature MIN TYP MAX UNIT -60 V -1 µA +100 nA -100 nA -1.0 -3.0 V 0.055 0.070 Ω -30 A 840 1310 pF 95 pF 70 pF 35 40 nC 6 nC 7.0 nC 50 ns 43 ns 300 ns 95 ns -18.3 A -73.2 A -1.0 -1.5 V 14 61 ns UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 7 QW-R502-713.H UTT18P06  TEST CIRCUITS AND WAVEFORMS RG VGS DUT ISD + VDS L - Driver dv/dt controlled by RG ISD controlled by pulse period Same Type as DUT VGS (Driver) Peak Diode Recovery dv/dt Test Circuit D= Gate Pulse Gate Pulse Width Period Power MOSFET VDD 10V ISD (DUT) VDS (DUT) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-713.H UTT18P06  TEST CIRCUITS AND WAVEFORMS Power MOSFET Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW.


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