UTT16P10

UNISONIC TECHNOLOGIES CO., LTD UTT16P10 -100V, -16A P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT16P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche.  FEATURES * RDS(ON) ≤ 0.21 Ω @ VGS=-10V, ID=-16A * High Switching Speed  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT16P10L-TN3-R UTT16P10G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-748.C UTT16P10 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous, TC=25°C VGSS@-10V TC=100°C ID -16 -9.8 A A Pulsed (Note 2) IDM -30 A Avalanche Energy Repetitive (Note 3) EAS 60 mJ Peak Diode Recovery dv/dt dv/dt -3.42 V/ns Power Dissipation (TC=25°C) PD 45 W Junction Temperature TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. ...