UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT80N05
80A, 50V N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC...
UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT80N05
80A, 50V N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC UTT80N05 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, superior switching performance and low gate charge. The UTC UTT80N05 is suitable for switching
regulators, DC linear mode control, automotive systems, solenoid & motor control, etc.
FEATURES
* RDS(ON)= 5.1mΩ @ VGS=10V, ID=80A * High switching speed
SYMBOL
www.DataSheet.net/
ORDERING INFORMATION
Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube
Ordering Number Lead Free Halogen Free UTT80N05L-TA3-T UTT80N05G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-695.a
Datasheet pdf - http://www.DataSheet4U.co.kr/
UTT80N05
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (Note 2) VDSS 50 V Gate-Source Voltage VGSS ±20 V ID 80 A Continuous (TC<135°C, VGS=10V) Drain Current Pulsed IDM 320 A Single Pulsed Avalanche Energy (Note 3) EAS 860 mJ Power Dissipation 312 W PD Derate Above 25°C 2.5 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and fun...