N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT80N10
80A, 100V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UTT80N10 is an N-channel ...
Description
UNISONIC TECHNOLOGIES CO., LTD UTT80N10
80A, 100V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UTT80N10 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge.
The UTC UTT80N10 is suitable for DC-DC converters, Off-Line UPS, High Voltage Synchronous Rectifier, Primary Switch for 48V and 24V Systems, etc.
FEATURES
* RDS(ON)<18mΩ @ VGS=10V, ID=80A * High Switching Speed * High Current Capacity * Low Gate Charge(typical 49nC)
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT80N10L-TA3-T
UTT80N10G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-220
Pin Assignment 123 GDS
Packing Tube
MARKING
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1 of 5
QW-R502-712.B
UTT80N10
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 100 V
Gate-Source Voltage
Drain Current
Continuous Pulsed (Note 2)
Single Pulsed Avalanche Energy (Note 3)
VGSS ID IDM EAS
±20 V 80 A 320 A 416 mJ
Power Dissipation Junction Temperature
PD 211 W
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation...
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