UTT60N05

UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60N05 60A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR „ DESCRIPTION Power MOSFET The UTC UTT60N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT60N05 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc. „ FEATURES * RDS(ON)=14mΩ @ VGS=10V,ID=20A * High Switching Speed * High Current Capacity * Low Gate Charge(typical 39nC) „ SYMBOL www.DataSheet.net/ „ ORDERING INFORMATION Package TO-220 1 G Pin Assignment 2 3 D S Packing Tube Ordering Number Lead Free Halogen Free UTT60N05L-TA3-T UTT60N05G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-662.a Datasheet pdf - http://www.DataSheet4U.co.kr/ UTT60N05 „ Preliminary Power MOSFE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 50 V Gate-Source Voltage VGSS ±20 V Continuous ID 60 A Drain Current 120 A Pulsed IDM Single Pulsed EAS 600 mJ Avalanche Energy Repetitive EAR 150 mJ Power Dissipation PD 125 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not imp...