UTT36N05

UNISONIC TECHNOLOGIES CO., LTD UTT36N05 Preliminary 36A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR  DESCRIPTION The UTC UTT36N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT36N05 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc.  FEATURES * RDS(ON) < 40mΩ @ VGS=5V * High Switching Speed * High Current Capacity  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free - UTT36N05G-AA3-T UTT36N05L-TA3-T UTT36N05G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-220 Pin Assignment 123 GDS GDS Packing Tube Tube  MARKING SOT-223 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd TO-220 1 of 6 QW-R502-654.b UTT36N05 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0) Drain-Gate Voltage (RGS=20kΩ) VDSS VDGR 50 50 V V Gate-Source Voltage Drain Current Continuous TC=25°C TC=100°C Pulsed (Note 2) VGSS ID IDM ±15 36 25 144 V A A A Avalanche Energy Single Pulsed Repetitive EAS EAR 240 mJ 60 mJ Power Dissipation (TC=25°C) SOT-223 TO-220 PD 11 W 100 W Junction Temperature Storage Temperature TJ TSTG 150 -65~175 °C °C Notes: 1. Absolute maximum ratings are those values beyond whi...