UTT3205

UNISONIC TECHNOLOGIES CO., LTD UTT3205 Preliminary N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT3205 uses advanced technology to provide excellent RDS(ON), fast switching, low gate charge, and excellent efficiency. This device is suitable for all commercial-industrial applications at power dissipation levels to approximately 50 watts. „ FEATURES * RDS(ON)<8 mΩ @VGS=10V * Ultra Low Gate Charge ( 146nC max ) * Low Reverse Transfer Capacitance ( CRSS = typ. 211 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness „ SYMBOL 2.Drain 1 Power MOSFET TO-220 1.Gate 3.Source „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT3205L-TA3-T UTT3205G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 123 GDS Packing Tube „ MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-510.c UTT3205 Preliminary Power MOSFET „ ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate-Source Voltage VGSS ±20 V Drain Current Continuous (VGS=10V) Pulsed (Note 2) ID IDM 110 390 A Avalanche Current (Note 2) IAR 62 A Avalanche Energy Repetitive (Note 2) Single Pulsed (Note 3) EAR EAS 20 450 mJ Power Dissipation (TC=25°C) PD 200 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond whic...