UTT30N08

UNISONIC TECHNOLOGIES CO., LTD UTT30N08 Preliminary 80V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT30N08 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC UTT30N08 is generally applied in high efficiency switch mode power supplies.  FEATURES * RDS(ON)＜40mΩ @ VGS=10V, ID=30A * High Switching Speed  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT30N08L-TN3-R UTT30N08G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GD S Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-732.c UTT30N08 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) (Note 4) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 80 V Gate-Source Voltage Drain Current (Note 5) Continuous TC=25°C TC=100°C Pulsed (Note 2) VGSS ID IDM ±20 30 18 90 V A A A Avalanche Energy Single Pulsed (Note 3) Power Dissipation (TC=25°C) EAS PD 138 mJ 54 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute ...