N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100N08
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
Power MOSFET...
Description
UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100N08
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC UTT100N08 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
FEATURES
* Fast switching speed * RDS(ON)= 7mΩ @ VGS=10V * Work below 175°C * 100% avalanche tested * Improved dv/dt capability
SYMBOL
2.Drain
www.DataSheet.net/
1.Gate
3.Source
ORDERING INFORMATION
Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube
Ordering Number Lead Free Halogen Free UTT100N08L-TA3-T UTT100N08G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source UTT100N08L-TA3-T (1)Packing Type (2)Package Type (3)Lead Free
(1) T: Tube (2) TA3: TO-220 (3) G: Halogen Free, L: Lead Free
www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-727.a
Datasheet pdf - http://www.DataSheet4U.co.kr/
UTT100N08
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Continuous ID 100 A Drain Current Pulsed IDM 400 A Avalanche Energy Single Pulsed EAS 875 mJ Peak Diode Recovery dv/dt dv/dt 6 V/ns Power Dissipation PD 83 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are...
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