UTT100N05

UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100N05 100A, 50V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance and superior switching performance. „ FEATURES * RDS(ON)= 7mΩ @ VGS=10V, ID= 50A RDS(ON)= 10mΩ @ VGS=4.5V, ID=50A * High switching speed * Improved dv/dt capability „ ORDERING INFORMATION Package TO-220 www.DataSheet.net/ Ordering Number Lead Free Halogen Free UTT100N05L-TA3-T UTT100N05G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source 1 G Pin Assignment 2 3 D S Packing Tube www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-688.a Datasheet pdf - http://www.DataSheet4U.co.kr/ UTT100N05 „ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 50 V VGSS ±20 V 100 A Continuous ID Drain Current Pulsed IDM 400 A Avalanche Energy Single Pulsed EAS 875 mJ Power Dissipation PD 83 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL CHARACTERISTICS SYMBOL θJA θJC RATINGS 62.5 1.5 UNIT °C/W °C/W PARAMETER Junction to Ambient Junction to Case „ ELECTRICAL CHARACTERISTICS S...