UT2321

UNISONIC TECHNOLOGIES CO., LTD UT2321 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION Power MOSFET The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON)<55mΩ @VGS=-4.5V * RDS(ON)<80mΩ @VGS=-2.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 3.Drain www.DataSheet.net/ 2.Gate 1.Source „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2321L-AE3-R UT2321G-AE3-R Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel „ MARKING 231 L: Lead Free G: Halogen Free 1 of 4 QW-R502-249.D www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd Datasheet pdf - http://www.DataSheet4U.co.kr/ UT2321 „ ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 2) ID -3.8 A Pulsed Drain Current (Note 2) IDM -15.2 A Power Dissipation PD 1.25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) „ THERMAL DATA PARAMETER SY...