N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD
UT2316
N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The UTC UT2316 is N-channel enhancement m...
Description
UNISONIC TECHNOLOGIES CO., LTD
UT2316
N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The UTC UT2316 is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization.
Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
UT2316L-AA3-R
UT2316G-AA3-R
UT2316L-AE2-R
UT2316G-AE2-R
UT2316L-AE3-R
UT2316G-AE3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-223 SOT-23-3 SOT-23
Pin Assignment
1
2
3
G
D
S
G
S
D
G
S
D
Packing
Tape Reel Tape Reel Tape Reel
MARKING
SOT-23
SOT-223
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1 of 5
QW-R502-126.G
UT2316
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (Note 3)
ID
Pulsed Drain Current (Note 1, 2)
IDM
Avalanche Energy
Single Pulsed (Note 3)
EAS
Total Power Dissipation (TA=25°C)
SOT-23-3 SOT-23 SOT-223
PD
30
V
±20
V
3.6
A
16
A
66
mJ
0.5
W
0.6
W
1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings ...
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