Document
UNISONIC TECHNOLOGIES CO., LTD UT2312
5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) ≤ 33 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 40 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced trench process technology * Excellent thermal and electrical capabilities * High density cell design for ultra low on-resistance
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT2312L-AE2-R
UT2312G-AE2-R
UT2312L-AE3-R
UT2312G-AE3-R
UT2312L-S08-R
UT2312G-S08-R
Note: Pin Assignment: G: Gate S: Source D: Drain
Package
SOT-23-3 SOT-23 SOP-8
Pin Assignment 12345678
Packing
G S D - - - - - Tape Reel
G S D - - - - - Tape Reel
S S S G D D D D Tape Reel
www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-205.H
UT2312
MARKING
SOT-23-3 / SOT-23
Power MOSFET
SOP-8
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-205.H
UT2312
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage Continuous Drain Current
VGSS ID
±8 5
V A
Pulsed Drain Current
Power Dissipation (TA =25°C) (Note 2)
SOT-23-3 SOT-23 SOP-8
IDM PD
15 A 1.25 W
2W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface mounted on 1 in 2 copper pad of FR4 board.
THERMAL DATA
PARAMETER Junction to Ambient
SOT-23-3 SOT-23 SOP-8
SYMBOL θJA
RATINGS 100 62.5
UNIT °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate–Body Leakage, Forward
BVDSS IDSS IGSS
VGS =0V, ID =250 µA VDS=20 V, VGS =0 V VGS =±8V, VDS = 0 V
ON CHARACTERISTICS Gate-Threshold Voltage
Static Drain–Source On–Resistance
On-State Drain Current Forward Transconductance
VGS(TH)
RDS(ON)
ID(ON) gFS
VDS =VGS, ID =250 µA VGS =4.5V, ID =5.0 A VGS =2.5 V, ID =4.0 A VDS≥10 V, VGS = 4.5 V VDS = 5V, ID = 5.0 A
DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VDS =10V, VGS =0V, f=1.0MHz
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time
QG QGS QGD tD(ON) tR tD(OFF)
tF
VDS =10V, VGS =4.5V, ID =3.6A
VDD=10V, ID =1A, RL =10Ω VGEN =4.5V, RG =6Ω
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Max. Diode Forward Current
IS
Drain-Source Diode Forward Voltage
VSD IS=1.0 A,VGS=0 V
Notes: Pulse test; pulse width ≤ 300μs, duty cycle ≤ 2%.
MIN TYP MAX UNIT
20 V 1 µA
±100 nA
0.45 25 35
15 20
V 33 mΩ 40 mΩ
A S
900 pF 140 pF 100 pF
11 14 nC 1.4 nC 2.2 nC 15 25 ns 40 60 ns 48 70 ns 31 45 ns
1.6 0.75 1.2
A V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-205.H
UT2312
TEST CIRCUIT AND WAVEFORM
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R502-205.H
.