UT2301

UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET -2.8A, -20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.  SYMBOL 3.Drain 33 2 1 SOT-23-3 (JEDEC TO-236) 12 SOT-323 3 2 1 SOT-23 (EIAJ SC-59) 1.Gate 2.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT2301L-AE2-R UT2301G-AE2-R SOT-23-3 UT2301L-AE3-R UT2301G-AE3-R SOT-23 UT2301L-AL3-R UT2301G-AL3-R SOT-323 Note: Pin Assignment: G: Gate S: Source D: Drain Pin Assignment 123 GSD GSD GSD Packing Tape Reel Tape Reel Tape Reel  MARKING 23A L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-118.K UT2301 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current Continuous ID -2.8 A Pulsed Drain Current Avalanche Energy Pulsed (Note 2) Single Pulsed (Note 3) IDM EAS -8.4 A 63 mJ Total Power Dissipation Junction Temperature PD 1.14 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be p...