UF3N30

UNISONIC TECHNOLOGIES CO., LTD UF3N30 Preliminary Power MOSFET 3A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF3N30 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. „ FEATURES * RDS(ON)<2Ω @ VGS=10V, ID=3A * High switching speed * Typically 4nC low gate charge * 100% avalanche tested „ SYMBOL www.DataSheet.net/ „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF3N30L-TM3-R UF3N30G-TM3-R Package TO-251 TO-252 S: Source 1 G G Pin Assignment 2 3 D S D S Packing Tape Reel Tape Reel UF3N30L-TN3-R UF3N30G- TN3-R Note: Pin Assignment: G: Gate D: Drain www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-826.a Datasheet pdf - http://www.DataSheet4U.co.kr/ UF3N30 „ PARAMETER Drain-Source Voltage Gate-Source Voltage Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS SYMBOL RATINGS UNIT VDSS 300 V VGSS ±20 V Continuous ID 3 A Continuous Drain Current 12 A Pulsed IDM Avalanche Energy EAS 52 mJ Power Dissipation PD 50 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS MIN TYP MAX UNIT 300 1 100 -100 2 4 2 200 90 30 4 0.64 1.6 10 50 30...