600V N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
2N60ZL
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60ZL is a high voltage MOS...
Description
UNISONIC TECHNOLOGIES CO., LTD
2N60ZL
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60ZL is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N60ZLL-TF1-T
2N60ZLG-TF1-T
2N60ZLL-TM3-T
2N60ZLG-TM3-T
2N60ZLL-TN3-R
2N60ZLG-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1 TO-251 TO-252
Pin Assignment
1
2
3
GDS
GDS
GDS
Packing
Tube Tube Tape Reel
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1 of 6
QW-R502-830.B
2N60ZL
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS
600
V
VGSS
±20
V
Avalanche Current (Note 2)
Drain Current
Continuous Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3) Repetitive (Note 2)
Peak Diode Recovery dv/dt (Not...
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